Thermal stabilization of porous silicon: A key step for high-quality SiGe epitaxy
Journal of Crystal Growth | Vol. 670 | Issue 128342 | 2025
DOI: https://doi.org/10.1016/j.jcrysgro.2025.128342
Transport and electrical properties of Si and Ge quantum dots embedded in oxide layers of MOS structures for optoelectronic applications
Journal of Materials Science: Materials in Electronics | Vol. 35 | Issue 1823 | 2024
DOI: https://doi.org/10.1007/s10854-024-13542-z