Publications

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Thermal stabilization of porous silicon: A key step for high-quality SiGe epitaxy

Journal of Crystal Growth | Vol. 670 | Issue 128342 | 2025

DOI: https://doi.org/10.1016/j.jcrysgro.2025.128342

Transport and electrical properties of Si and Ge quantum dots embedded in oxide layers of MOS structures for optoelectronic applications

Journal of Materials Science: Materials in Electronics | Vol. 35 | Issue 1823 | 2024

DOI: https://doi.org/10.1007/s10854-024-13542-z