Thermal stabilization of porous silicon: A key step for high-quality SiGe epitaxy

Journal of Crystal Growth | Vol. 670 | Issue 2025, 128342 | 2025

DOI: https://doi.org/10.1016/j.jcrysgro.2025.128342

Transport and electrical properties of Si and Ge quantum dots embedded in oxide layers of MOS structures for optoelectronic applications

Journal of Materials Science: Materials in Electronics | Vol. 35 | Issue 1823, (2024) | 2024

DOI: https://doi.org/10.1007/s10854-024-13542-z

The effect of strain and indium content on the optical properties of GaInAs/GaAs ternary alloys

Solid State Sciences | Vol. 111 | Issue 2021, 106468 | 2020

DOI: https://doi.org/10.1016/j.solidstatesciences.2020.106468